产品名称：ossila二硫化锡晶体

Tin(IV) sulfide (also known as tin disulfide SnS2), CAS number 1315-01-1, is a layered metal dichalcogenide semiconductor with a similar chemical and crystal structure to that of molybdenum disulfide (MoS2). In each individual layer, Sn is sandwiched between two S layers with strong covalent bonding, whereas individual mono-layers are held by weak van der Waals forces. Individual layers break free when weak van der Waals forces are overcome by either physical or chemical exfoliation.

Like many other two dimensional semiconductors, SnS2 can undergo exfoliation to form atomic-layer sheets that have applications in FETs, photovolatic solar cells, sensors and photocatalyst applications.

SnS2 is an n-type semiconducting material that has a hexagonal CdI2-type structure. It has attracted increasing attention as a promising anode materials due to its high theoretical capacity and abundancy.

We supply low price tin(IV) sulfide in several different forms for a range of applications.

Tin(IV) Sulfide Powder

Can be used for preparation of tin(IV) sulfide nanoplates and ultrathin films

Sold by weight

≥99.995% purity

Tin(IV) Sulfide Crystals by Size

Can be used to produce single or few-layer tin(IV) sulfide sheets via mechanical or liquid exfoliation

Small (≥10 mm2) or medium (≥25 mm2) crystals available*

≥99.999% purity

*Typical representative size, areas/dimensions may vary

Bulk single tin(IV) sulfide crystal is most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

Tin(IV) sulfide powder can also be used to prepare SnS2 nanosheets and nanoparticles by liquid-exfoliation (normally assisted by sonication). Cu intercalated bilayer SnS2 displays a hole field-effect mobility of ~40 cm2 V−1 s−1, and Co-SnS2 exhibits a metal-like behavior with sheet resistance comparable to that of few-layer graphene.

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